SCT10N120
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
SICFET N-CH 1200V 12A HIP247
SICFET N-CH 1200V 12A HIP247
Detailed specification
Detailed specification
N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole surface-mounted HiP247™
N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole surface-mounted HiP247™
Description
Description
The SCT10N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 12 A. It features a low on-resistance of 520 mΩ (typical at TJ = 150 °C) and operates efficiently in high-temperature environments up to 200 °C. The device is housed in a HiP247™ package, ensuring excellent thermal performance and reliability.
The SCT10N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 12 A. It features a low on-resistance of 520 mΩ (typical at TJ = 150 °C) and operates efficiently in high-temperature environments up to 200 °C. The device is housed in a HiP247™ package, ensuring excellent thermal performance and reliability.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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