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SCT1000N170

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
SCT1000N170 is designed for high-efficiency applications in industrial and telecommunications sectors, particularly in auxiliary power supplies and switch mode power supplies. Its advanced thermal properties and high operating junction temperature capability (TJ = 200 °C) enhance performance in demanding environments.
Detailed specification
Detailed specification
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm type 7 A
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm type 7 A
Description
Description
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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