SCT1000N170
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Detailed specification
Detailed specification
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm type 7 A
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm type 7 A
Description
Description
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Bengt or one of our other skilled sales representatives. They'll help you find the right service option.C