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SBC846BPDW1T1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
SBC846BPDW1T1G is utilized in general-purpose amplifier applications across various domains including automotive, consumer electronics, and telecommunications. Its robust specifications make it ideal for low-power surface mount applications, ensuring reliability and performance in diverse electronic circuits.
Specification
Specification
TRANS NPN/PNP 65V 0.1A SOT363
TRANS NPN/PNP 65V 0.1A SOT363
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 65V 100mA 100MHz 380mW surface-mounted SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 65V 100mA 100MHz 380mW surface-mounted SC-88/SC70-6/SOT-363
Description
Description
The SBC846BPDW1T1G is a dual NPN/PNP transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage rating of 65V, a continuous collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SOT-363 package, suitable for low-power applications.
The SBC846BPDW1T1G is a dual NPN/PNP transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage rating of 65V, a continuous collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SOT-363 package, suitable for low-power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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