SBC846BDW1T1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS 2NPN 65V 0.1A SC88/SC70-6
TRANS 2NPN 65V 0.1A SC88/SC70-6
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW surface-mounted SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW surface-mounted SC-88/SC70-6/SOT-363
Description
Description
The SBC846BDW1T1G is a dual NPN bipolar junction transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 65V, a collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SC-88/SC70-6 package, suitable for low-power applications.
The SBC846BDW1T1G is a dual NPN bipolar junction transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 65V, a collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SC-88/SC70-6 package, suitable for low-power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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