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SBAS20HT1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
SBAS20HT1G is designed for high voltage switching applications in automotive and industrial domains. Its robust specifications, including a reverse breakdown voltage of 250 V and low reverse leakage current, make it ideal for use in power management and signal processing circuits.
Specification
Specification
DIODE GEN PURP 200V 200MA SOD323
DIODE GEN PURP 200V 200MA SOD323
Detailed specification
Detailed specification
Diode 200 V 200mA surface-mounted SOD-323
Diode 200 V 200mA surface-mounted SOD-323
Description
Description
The SBAS20HT1G is a high voltage switching diode with a maximum reverse voltage of 200 V and a continuous forward current rating of 200 mA. It features a peak forward surge current of 625 mA and is housed in a SOD-323 package. This diode is AEC-Q101 qualified, making it suitable for automotive applications.
The SBAS20HT1G is a high voltage switching diode with a maximum reverse voltage of 200 V and a continuous forward current rating of 200 mA. It features a peak forward surge current of 625 mA and is housed in a SOD-323 package. This diode is AEC-Q101 qualified, making it suitable for automotive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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