RUM002N02T2L
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 20V 200MA VMT3
MOSFET N-CH 20V 200MA VMT3
Detailed specification
Detailed specification
N-Channel 20 V 200mA (Ta) 150mW (Ta) surface-mounted VMT3
N-Channel 20 V 200mA (Ta) 150mW (Ta) surface-mounted VMT3
Description
Description
The RUM002N02T2L is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 20V and a continuous drain current rating of 200mA at a junction temperature of 25°C. This device is housed in a compact surface mount VMT3 package, allowing for efficient thermal management with a power dissipation capability of 150mW. Its low RDS(on) characteristics make it suitable for various switching applications, ensuring minimal power loss and enhanced performance in electronic circuits.
The RUM002N02T2L is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 20V and a continuous drain current rating of 200mA at a junction temperature of 25°C. This device is housed in a compact surface mount VMT3 package, allowing for efficient thermal management with a power dissipation capability of 150mW. Its low RDS(on) characteristics make it suitable for various switching applications, ensuring minimal power loss and enhanced performance in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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