RSR030N06TL
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 3A TSMT3
MOSFET N-CH 60V 3A TSMT3
Detailed specification
Detailed specification
N-Channel 60 V 3A (Ta) 540mW (Ta) surface-mounted TSMT3
N-Channel 60 V 3A (Ta) 540mW (Ta) surface-mounted TSMT3
Description
Description
The RSR030N06TL is an N-Channel MOSFET designed for applications requiring low on-state resistance and high efficiency. It features a maximum Drain-Source voltage (VDSS) of 60V, continuous drain current (ID) of ±3A, and a power dissipation (PD) of 1.0W. The device is housed in a compact TSMT3 surface mount package, with a maximum RDS(on) of 85mΩ. It includes a built-in gate-source protection diode, making it suitable for various electronic applications.
The RSR030N06TL is an N-Channel MOSFET designed for applications requiring low on-state resistance and high efficiency. It features a maximum Drain-Source voltage (VDSS) of 60V, continuous drain current (ID) of ±3A, and a power dissipation (PD) of 1.0W. The device is housed in a compact TSMT3 surface mount package, with a maximum RDS(on) of 85mΩ. It includes a built-in gate-source protection diode, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C