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RSR025N03HZGTL

Manufacturer

ROHM

data-sheet
Data sheet
Data sheet
RSR025N03HZG is designed for automotive applications, particularly in switching power supplies and motor control circuits. Its low on-state resistance and compact size make it ideal for efficient power management in space-constrained environments.
Specification
Specification
MOSFET N-CH 30V 2.5A TSMT3
MOSFET N-CH 30V 2.5A TSMT3
Detailed specification
Detailed specification
N-Channel 30 V 2.5A (Ta) 700mW (Ta) Surface Mount TSMT3
N-Channel 30 V 2.5A (Ta) 700mW (Ta) Surface Mount TSMT3
Description
Description
The RSR025N03HZG is an N-Channel MOSFET with a maximum Drain-Source voltage (VDSS) of 30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 70mΩ and a power dissipation (PD) of 1.0W. This surface-mounted device is housed in a compact TSMT3 package, making it suitable for space-constrained applications. It includes built-in gate-source protection and is AEC-Q101 qualified, ensuring reliability in automotive applications.
The RSR025N03HZG is an N-Channel MOSFET with a maximum Drain-Source voltage (VDSS) of 30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 70mΩ and a power dissipation (PD) of 1.0W. This surface-mounted device is housed in a compact TSMT3 package, making it suitable for space-constrained applications. It includes built-in gate-source protection and is AEC-Q101 qualified, ensuring reliability in automotive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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