RSQ025P03HZGTR
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 2.5A TSMT6
MOSFET P-CH 30V 2.5A TSMT6
Detailed specification
Detailed specification
P-Channel 30 V 2.5A (Ta) 950mW (Ta) surface-mounted TSMT6 (SC-95)
P-Channel 30 V 2.5A (Ta) 950mW (Ta) surface-mounted TSMT6 (SC-95)
Description
Description
The RSQ025P03HZG is a P-Channel MOSFET with a maximum drain-source voltage (VDSS) of -30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 110mΩ and a power dissipation of 1.25W. This surface-mounted device is housed in a TSMT6 package, making it suitable for compact applications. It includes a built-in gate-source protection diode and is AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
The RSQ025P03HZG is a P-Channel MOSFET with a maximum drain-source voltage (VDSS) of -30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 110mΩ and a power dissipation of 1.25W. This surface-mounted device is housed in a TSMT6 package, making it suitable for compact applications. It includes a built-in gate-source protection diode and is AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C