RN4987,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS NPN/PNP PREBIAS 0.2W US6
TRANS NPN/PNP PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
Description
Description
The RN4987 is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for high-frequency applications up to 250MHz.
The RN4987 is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for high-frequency applications up to 250MHz.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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