RN4985,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS NPN/PNP PREBIAS 0.2W US6
TRANS NPN/PNP PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
Description
Description
The RN4985,LF is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for high-frequency applications up to 250MHz, integrating bias resistors to minimize external components.
The RN4985,LF is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for high-frequency applications up to 250MHz, integrating bias resistors to minimize external components.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C