RN4982FE,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS NPN/PNP PREBIAS 0.1W ES6
TRANS NPN/PNP PREBIAS 0.1W ES6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Description
Description
The RN4982FE is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a transition frequency of 250MHz. This dual transistor is designed for surface mount applications, integrating bias resistors to minimize external components.
The RN4982FE is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a transition frequency of 250MHz. This dual transistor is designed for surface mount applications, integrating bias resistors to minimize external components.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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