RN2905FE,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2PNP PREBIAS 0.1W ES6
TRANS 2PNP PREBIAS 0.1W ES6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW surface-mounted ES6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW surface-mounted ES6
Description
Description
The RN2905FE,LF is a pre-biased bipolar transistor (BJT) featuring 2 PNP transistors in a compact ES6 surface mount package. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 100mW, with a transition frequency of 200MHz. The integrated bias resistors simplify circuit design by reducing external component count.
The RN2905FE,LF is a pre-biased bipolar transistor (BJT) featuring 2 PNP transistors in a compact ES6 surface mount package. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 100mW, with a transition frequency of 200MHz. The integrated bias resistors simplify circuit design by reducing external component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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