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RN2905FE,LF(CT

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RN2905FE,LF is suitable for applications in switching, inverter circuits, interfacing, and driver circuits. Its small package and built-in bias resistors make it ideal for compact electronic designs in industrial and consumer electronics sectors, enhancing system efficiency and reducing assembly time.
Specification
Specification
TRANS 2PNP PREBIAS 0.1W ES6
TRANS 2PNP PREBIAS 0.1W ES6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW surface-mounted ES6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW surface-mounted ES6
Description
Description
The RN2905FE,LF is a pre-biased bipolar transistor (BJT) featuring 2 PNP transistors in a compact ES6 surface mount package. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 100mW, with a transition frequency of 200MHz. The integrated bias resistors simplify circuit design by reducing external component count.
The RN2905FE,LF is a pre-biased bipolar transistor (BJT) featuring 2 PNP transistors in a compact ES6 surface mount package. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 100mW, with a transition frequency of 200MHz. The integrated bias resistors simplify circuit design by reducing external component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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