RN2904,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2PNP PREBIAS 0.2W US6
TRANS 2PNP PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW surface-mounted US6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW surface-mounted US6
Description
Description
The RN2904,LF is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 200mW. This surface-mounted device is suitable for high-frequency applications up to 200MHz, integrating bias resistors to minimize external components.
The RN2904,LF is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 200mW. This surface-mounted device is suitable for high-frequency applications up to 200MHz, integrating bias resistors to minimize external components.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gustaf or one of our other skilled sales representatives. They'll help you find the right service option.C