RN2605(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2PNP PREBIAS 0.3W SM6
TRANS 2PNP PREBIAS 0.3W SM6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW surface-mounted SM6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW surface-mounted SM6
Description
Description
The RN2605(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various low-power applications. With a transition frequency of 200MHz and a power dissipation capability of 300mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The SM6 package ensures ease of integration into modern PCB designs, providing reliable operation in diverse environments.
The RN2605(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various low-power applications. With a transition frequency of 200MHz and a power dissipation capability of 300mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The SM6 package ensures ease of integration into modern PCB designs, providing reliable operation in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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