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RN1910FE,LF(CT

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RN1910FE is designed for use in industrial and automotive applications, particularly in switching, inverter circuits, interfacing, and driver circuits. Its compact design and integrated bias resistor facilitate reduced system size and assembly time, making it ideal for space-constrained environments.
Specification
Specification
TRANS 2NPN PREBIAS 0.1W ES6
TRANS 2NPN PREBIAS 0.1W ES6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW surface-mounted ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW surface-mounted ES6
Description
Description
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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