RN1910FE,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2NPN PREBIAS 0.1W ES6
TRANS 2NPN PREBIAS 0.1W ES6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW surface-mounted ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW surface-mounted ES6
Description
Description
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Bengt or one of our other skilled sales representatives. They'll help you find the right service option.C