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Manufacturers

RN1906,LF(CT

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RN1906,LF(CT) is utilized in various electronic applications, including signal amplification, switching circuits, and RF applications. Its pre-biased configuration simplifies circuit design, making it suitable for consumer electronics, telecommunications, and automotive systems where space and efficiency are critical.
Specification
Specification
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Description
Description
The RN1906,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various applications. With a frequency response of up to 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures a small footprint, ideal for modern electronic designs requiring space-saving components.
The RN1906,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various applications. With a frequency response of up to 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures a small footprint, ideal for modern electronic designs requiring space-saving components.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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