RN1905,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Description
Description
The RN1905,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various low-power applications. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures ease of integration into modern PCB designs, providing reliable switching and amplification functions.
The RN1905,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various low-power applications. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures ease of integration into modern PCB designs, providing reliable switching and amplification functions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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