RN1903,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW surface-mounted US6
Description
Description
The RN1903,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this component is ideal for high-frequency switching and amplification tasks. The US6 package ensures compact integration into various electronic circuits, making it suitable for space-constrained designs.
The RN1903,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this component is ideal for high-frequency switching and amplification tasks. The US6 package ensures compact integration into various electronic circuits, making it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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