logo

RN1608(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RN1608(TE85L,F) is designed for use in industrial applications, particularly in switching, inverter, interface, and driver circuits. Its pre-biased configuration allows for simplified circuit designs, reducing component count and enhancing miniaturization in electronic devices.
Specification
Specification
TRANS 2NPN PREBIAS 0.3W SM6
TRANS 2NPN PREBIAS 0.3W SM6
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW surface-mounted SM6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW surface-mounted SM6
Description
Description
The RN1608(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring two NPN devices in a surface mount SM6 package. It operates at a collector-emitter voltage of 50V, collector current of 100mA, and a power dissipation of 300mW. This device simplifies circuit design by integrating bias resistors, making it suitable for various applications in switching and driver circuits.
The RN1608(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring two NPN devices in a surface mount SM6 package. It operates at a collector-emitter voltage of 50V, collector current of 100mA, and a power dissipation of 300mW. This device simplifies circuit design by integrating bias resistors, making it suitable for various applications in switching and driver circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.
Petra Målberg
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.