RN1405,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin S-Mini T/R
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin S-Mini T/R
Description
Description
The RN1405,LF(T) from Toshiba is a Trans Digital BJT NPN transistor designed for low-power applications. It features a maximum collector-emitter voltage of 50V, a collector current rating of 100mA, and a power dissipation capability of 200mW. This 3-pin S-Mini package provides a compact footprint suitable for space-constrained designs. The transistor is ideal for signal amplification and switching applications in consumer electronics, automotive systems, and industrial control circuits, ensuring reliable performance in various electronic devices.
The RN1405,LF(T) from Toshiba is a Trans Digital BJT NPN transistor designed for low-power applications. It features a maximum collector-emitter voltage of 50V, a collector current rating of 100mA, and a power dissipation capability of 200mW. This 3-pin S-Mini package provides a compact footprint suitable for space-constrained designs. The transistor is ideal for signal amplification and switching applications in consumer electronics, automotive systems, and industrial control circuits, ensuring reliable performance in various electronic devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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