RN1306,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
Description
Description
The RN1306,LF(T) from Toshiba is a Trans Digital BJT NPN transistor designed for low-power applications. It operates at a maximum collector-emitter voltage of 50V, with a collector current rating of 100mA and a power dissipation of 100mW. This 3-pin USM package is suitable for surface mount applications, providing efficient switching and amplification capabilities. The device is ideal for use in signal processing, low-frequency amplification, and various digital circuit applications, ensuring reliable performance in compact designs.
The RN1306,LF(T) from Toshiba is a Trans Digital BJT NPN transistor designed for low-power applications. It operates at a maximum collector-emitter voltage of 50V, with a collector current rating of 100mA and a power dissipation of 100mW. This 3-pin USM package is suitable for surface mount applications, providing efficient switching and amplification capabilities. The device is ideal for use in signal processing, low-frequency amplification, and various digital circuit applications, ensuring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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