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RN1105MFV,L3F(CT

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RN1105MFV,L3F is suitable for various applications including switching, inverter circuits, interfacing, and driver circuits in industrial and automotive domains. Its ultra-small package allows for high-density mounting, making it ideal for compact electronic designs.
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A VESM
TRANS PREBIAS NPN 50V 0.1A VESM
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Description
Description
The RN1105MFV,L3F is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 150mW. The integrated bias resistor simplifies circuit design by reducing external component count.
The RN1105MFV,L3F is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 150mW. The integrated bias resistor simplifies circuit design by reducing external component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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