RN1102,LF(CT
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN 50V 0.1A SSM
TRANS PREBIAS NPN 50V 0.1A SSM
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW surface-mounted SSM
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW surface-mounted SSM
Description
Description
The RN1102,LF is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, with a transition frequency of 250 MHz. The integrated bias resistor simplifies circuit design by reducing external component count.
The RN1102,LF is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, with a transition frequency of 250 MHz. The integrated bias resistor simplifies circuit design by reducing external component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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