RGWS60TS65DGC13
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
IGBT TRNCH FIELD 650V 51A TO247G
IGBT TRNCH FIELD 650V 51A TO247G
Detailed specification
Detailed specification
IGBT Trench Field Stop 650 V 51 A 156 W Through Hole TO-247G
IGBT Trench Field Stop 650 V 51 A 156 W Through Hole TO-247G
Description
Description
The RGWS60TS65DGC13 from Rohm Semiconductor is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. This IGBT features a trench field stop structure, allowing for a maximum voltage rating of 650 V and a continuous current rating of 51 A, with a power dissipation capability of 156 W. Packaged in a TO-247G through-hole configuration, it is suitable for applications requiring high efficiency and thermal performance, making it ideal for motor drives, inverters, and power supplies.
The RGWS60TS65DGC13 from Rohm Semiconductor is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. This IGBT features a trench field stop structure, allowing for a maximum voltage rating of 650 V and a continuous current rating of 51 A, with a power dissipation capability of 156 W. Packaged in a TO-247G through-hole configuration, it is suitable for applications requiring high efficiency and thermal performance, making it ideal for motor drives, inverters, and power supplies.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C