RGSX5TS65DHRC11
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
IGBT TRENCH FLD 650V 114A TO247N
IGBT TRENCH FLD 650V 114A TO247N
Detailed specification
Detailed specification
IGBT Trench Field Stop 650 V 114 A 404 W Through Hole TO-247N
IGBT Trench Field Stop 650 V 114 A 404 W Through Hole TO-247N
Description
Description
The RGSX5TS65DHRC11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. With a voltage rating of 650V and a current rating of 114A, this device is capable of handling significant power levels, with a maximum power dissipation of 404W. The TO-247N package allows for easy mounting and effective thermal management. This IGBT features a trench field stop structure, which enhances switching performance and reduces losses, making it suitable for demanding applications in industrial and automotive sectors.
The RGSX5TS65DHRC11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. With a voltage rating of 650V and a current rating of 114A, this device is capable of handling significant power levels, with a maximum power dissipation of 404W. The TO-247N package allows for easy mounting and effective thermal management. This IGBT features a trench field stop structure, which enhances switching performance and reduces losses, making it suitable for demanding applications in industrial and automotive sectors.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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