logo

RFM04U6P(TE12L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
RFM04U6P is utilized in telecommunications equipment, specifically for high-frequency power amplifier applications in VHF and UHF bands. Its specifications, including a maximum drain-source voltage of 16V and a power dissipation of 7W, make it ideal for enhancing signal strength and efficiency in communication systems.
Specification
Specification
RF MOSFET 6V PW-MINI
RF MOSFET 6V PW-MINI
Detailed specification
Detailed specification
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
Description
Description
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.
Gabriella Carlberg
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.