RFM04U6P(TE12L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
RF MOSFET 6V PW-MINI
RF MOSFET 6V PW-MINI
Detailed specification
Detailed specification
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
Description
Description
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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