RFD16N06LESM9A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 16A TO252AA
MOSFET N-CH 60V 16A TO252AA
Detailed specification
Detailed specification
N-Channel 60 V 16A (Tc) 90W (Tc) surface-mounted TO-252AA
N-Channel 60 V 16A (Tc) 90W (Tc) surface-mounted TO-252AA
Description
Description
The RFD16N06LESM9A is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 60V, continuous drain current of 16A, and a low on-state resistance (RDS(on)) of 0.047Ω. This device is suitable for switching regulators, motor drivers, and relay drivers, operating efficiently with gate bias in the 3V to 5V range, allowing direct interfacing with logic level circuits.
The RFD16N06LESM9A is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 60V, continuous drain current of 16A, and a low on-state resistance (RDS(on)) of 0.047Ω. This device is suitable for switching regulators, motor drivers, and relay drivers, operating efficiently with gate bias in the 3V to 5V range, allowing direct interfacing with logic level circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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