RFD16N05LSM9A
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 50V 16A DPAK
MOSFET N-CH 50V 16A DPAK
Detailed specification
Detailed specification
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Description
Description
The RFD16N05LSM9A is a 60V N-Channel MOSFET designed for efficient switching applications. It features a maximum continuous drain current of 16A, an on-state resistance (RDS(ON)) of less than 47mΩ at VGS = 5V, and fast switching speeds with a turn-on time of 60 ns. This device is optimized for 5V gate drives and can be directly driven from CMOS, NMOS, and TTL circuits.
The RFD16N05LSM9A is a 60V N-Channel MOSFET designed for efficient switching applications. It features a maximum continuous drain current of 16A, an on-state resistance (RDS(ON)) of less than 47mΩ at VGS = 5V, and fast switching speeds with a turn-on time of 60 ns. This device is optimized for 5V gate drives and can be directly driven from CMOS, NMOS, and TTL circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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