RFD16N05
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
N-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
Detailed specification
Detailed specification
N-Channel 50 V 16A (Tc) 72W (Tc) Through Hole IPAK
N-Channel 50 V 16A (Tc) 72W (Tc) Through Hole IPAK
Description
Description
The RFD16N05 from Fairchild Semiconductor is an N-Channel Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage of 50 V and can handle a continuous drain current of 16 A at a case temperature (Tc). With a power dissipation capability of 72 W (Tc), this device is suitable for various power management tasks. The MOSFET is housed in an IPAK package, allowing for through-hole mounting, which facilitates easy integration into circuit designs. Its robust performance makes it ideal for switching and amplification applications.
The RFD16N05 from Fairchild Semiconductor is an N-Channel Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage of 50 V and can handle a continuous drain current of 16 A at a case temperature (Tc). With a power dissipation capability of 72 W (Tc), this device is suitable for various power management tasks. The MOSFET is housed in an IPAK package, allowing for through-hole mounting, which facilitates easy integration into circuit designs. Its robust performance makes it ideal for switching and amplification applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
RFD16N05 is also available from the following manufacturersContact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C