RF3L05250CB4
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 28V LBB
RF MOSFET LDMOS 28V LBB
Detailed specification
Detailed specification
RF Mosfet 28 V 100 mA 1GHz 18dB 250W LBB
RF Mosfet 28 V 100 mA 1GHz 18dB 250W LBB
Description
Description
The RF3L05250CB4 is a 250 W, 28/32 V LDMOS RF power transistor designed for wideband communication and ISM applications from HF to 1 GHz. It features high efficiency (62%) and linear gain (18 dB), integrated ESD protection, and supports class AB, B, or C operation. It is suitable for various communication applications, including avionics and ground communication.
The RF3L05250CB4 is a 250 W, 28/32 V LDMOS RF power transistor designed for wideband communication and ISM applications from HF to 1 GHz. It features high efficiency (62%) and linear gain (18 dB), integrated ESD protection, and supports class AB, B, or C operation. It is suitable for various communication applications, including avionics and ground communication.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gustaf or one of our other skilled sales representatives. They'll help you find the right service option.C