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RF3L05200CB4

Manufacturer

ST MICROELECTRONICS

RF MOSFET LDMOS LBB is typically used in RF amplification applications, including telecommunications, broadcasting, and industrial RF systems. Its high power handling and efficiency make it ideal for base stations, transmitters, and other RF equipment requiring reliable performance at high frequencies.
Specification
Specification
RF MOSFET LDMOS LBB
RF MOSFET LDMOS LBB
Detailed specification
Detailed specification
RF Mosfet 1GHz 19dB 200W LBB
RF Mosfet 1GHz 19dB 200W LBB
Description
Description
The RF3L05200CB4 from STMicroelectronics is a high-performance RF MOSFET designed for LDMOS applications. This device operates efficiently at frequencies up to 1 GHz, providing a gain of 19 dB and a maximum output power of 200W. Its robust design ensures reliable performance in demanding RF environments, making it suitable for various applications in telecommunications and broadcasting. The RF MOSFET is optimized for linearity and efficiency, ensuring minimal distortion and high fidelity in signal amplification.
The RF3L05200CB4 from STMicroelectronics is a high-performance RF MOSFET designed for LDMOS applications. This device operates efficiently at frequencies up to 1 GHz, providing a gain of 19 dB and a maximum output power of 200W. Its robust design ensures reliable performance in demanding RF environments, making it suitable for various applications in telecommunications and broadcasting. The RF MOSFET is optimized for linearity and efficiency, ensuring minimal distortion and high fidelity in signal amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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