RE1C002UNTCL
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 20V 200MA EMT3F
MOSFET N-CH 20V 200MA EMT3F
Detailed specification
Detailed specification
N-Channel 20 V 200mA (Ta) 150mW (Ta) surface-mounted EMT3F (SOT-416FL)
N-Channel 20 V 200mA (Ta) 150mW (Ta) surface-mounted EMT3F (SOT-416FL)
Description
Description
The RE1C002UNTCL is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source voltage (VDSS) of 20V and a continuous drain current (ID) of ±200mA. It has a maximum on-state resistance (RDS(on)) of 1.2Ω and a power dissipation (PD) of 150mW. This surface-mounted device (EMT3F) is ideal for portable equipment due to its low voltage drive capability of 1.2V and includes a built-in gate-source protection diode.
The RE1C002UNTCL is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source voltage (VDSS) of 20V and a continuous drain current (ID) of ±200mA. It has a maximum on-state resistance (RDS(on)) of 1.2Ω and a power dissipation (PD) of 150mW. This surface-mounted device (EMT3F) is ideal for portable equipment due to its low voltage drive capability of 1.2V and includes a built-in gate-source protection diode.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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