RD3G01BATTL1
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
PCH -40V -15A POWER MOSFET - RD3
PCH -40V -15A POWER MOSFET - RD3
Detailed specification
Detailed specification
P-Channel 40 V 15A (Tc) 25W (Tc) surface-mounted TO-252
P-Channel 40 V 15A (Tc) 25W (Tc) surface-mounted TO-252
Description
Description
The RD3G01BATTL1 is a P-Channel Power MOSFET from Rohm Semiconductor, designed for high-efficiency applications. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 15A at a case temperature of 25°C. The device is housed in a TO-252 package, suitable for surface mount applications, and can handle a power dissipation of up to 25W. This MOSFET is ideal for use in power management circuits, motor control, and other applications requiring efficient switching performance.
The RD3G01BATTL1 is a P-Channel Power MOSFET from Rohm Semiconductor, designed for high-efficiency applications. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 15A at a case temperature of 25°C. The device is housed in a TO-252 package, suitable for surface mount applications, and can handle a power dissipation of up to 25W. This MOSFET is ideal for use in power management circuits, motor control, and other applications requiring efficient switching performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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