R6507END3TL1
Manufacturer
ROHM
Data sheet
Data sheet
Specification
Specification
650V 7A TO-252, LOW-NOISE POWER
650V 7A TO-252, LOW-NOISE POWER
Detailed specification
Detailed specification
N-Channel 650 V 7A (Tc) 78W (Tc) surface-mounted TO-252
N-Channel 650 V 7A (Tc) 78W (Tc) surface-mounted TO-252
Description
Description
The R6507END3TL1 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for low-noise power applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 7A at a case temperature (Tc) of 25°C. The device is housed in a TO-252 package, allowing for efficient surface mount installation. With a power dissipation capability of 78W (Tc), this MOSFET is ideal for applications requiring high voltage and current handling with minimal noise interference, making it suitable for power management and switching applications in various electronic circuits.
The R6507END3TL1 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for low-noise power applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 7A at a case temperature (Tc) of 25°C. The device is housed in a TO-252 package, allowing for efficient surface mount installation. With a power dissipation capability of 78W (Tc), this MOSFET is ideal for applications requiring high voltage and current handling with minimal noise interference, making it suitable for power management and switching applications in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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