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R1RW0416DSB-2PR#S1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-2PR#S1 is utilized in high-speed memory applications, particularly in industrial and telecommunications sectors. Its characteristics make it ideal for cache and buffer memory, where fast access times and low power consumption are critical. The device's compatibility with TTL logic further enhances its integration into diverse electronic systems.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Description
Description
The R1RW0416DSB-2PR#S1 is a 4Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is TTL compatible and offers low standby currents, making it suitable for cache and buffer memory in various systems.
The R1RW0416DSB-2PR#S1 is a 4Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is TTL compatible and offers low standby currents, making it suitable for cache and buffer memory in various systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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