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R1RW0416DSB-2PR#D1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-2PR#D1 is suitable for industrial applications, particularly in systems requiring high-speed and high-density memory solutions. Typical applications include cache and buffer memory in computing systems, where low power consumption and fast access times are critical.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM Memory IC 4Mbit Parallel 12 ns 44-TSOP II
SRAM Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Description
Description
The R1RW0416DSB-2PR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package.
The R1RW0416DSB-2PR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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