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R1RW0416DSB-2LR#D1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-2LR#D1 is ideal for high-speed memory applications in industrial and consumer electronics, particularly in cache and buffer memory systems. Its low power consumption makes it suitable for battery backup systems, ensuring efficient performance in various electronic devices.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM Memory IC 4Mbit Parallel 12 ns 44-TSOP II
SRAM Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Description
Description
The R1RW0416DSB-2LR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 3.3V supply and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin TSOP II package, suitable for surface mounting.
The R1RW0416DSB-2LR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 3.3V supply and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin TSOP II package, suitable for surface mounting.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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