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R1RW0416DSB-0PR#S1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-0PR#S1 is suitable for high-speed memory applications in industrial and telecommunications sectors, particularly in cache and buffer memory configurations where quick data retrieval and high density are essential.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Description
Description
The R1RW0416DSB-0PR#S1 is a 4Mbit high-speed asynchronous SRAM organized as 256-kword × 16-bit. It features a 10 ns access time, operates on a single 5.0V supply, and is TTL compatible. This static memory requires no clock or timing strobe, making it ideal for applications needing fast data access.
The R1RW0416DSB-0PR#S1 is a 4Mbit high-speed asynchronous SRAM organized as 256-kword × 16-bit. It features a 10 ns access time, operates on a single 5.0V supply, and is TTL compatible. This static memory requires no clock or timing strobe, making it ideal for applications needing fast data access.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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