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R1RW0416DSB-0PR#D1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-0PR#D1 is suitable for high-speed memory applications in industrial and consumer electronics, particularly in systems requiring efficient cache and buffer memory solutions. Its low power consumption makes it ideal for battery backup systems, ensuring reliable performance in various electronic devices.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Description
Description
The R1RW0416DSB-0PR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, featuring an access time of 10 ns. It operates on a single 3.3V supply and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package.
The R1RW0416DSB-0PR#D1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, featuring an access time of 10 ns. It operates on a single 3.3V supply and is designed for applications requiring high-speed, high-density memory, such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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