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R1RW0416DSB-0PI#D1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DSB-0PI#D1 is suitable for high-speed memory applications in industrial and consumer electronics, particularly in systems requiring fast access times and low power consumption, such as cache and buffer memory in computing devices.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Description
Description
The R1RW0416DSB-0PI#D1 is a 4-Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 10 ns access time. It operates on a single 3.3V supply and is designed for high-speed applications such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package, ensuring high-density surface mounting.
The R1RW0416DSB-0PI#D1 is a 4-Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 10 ns access time. It operates on a single 3.3V supply and is designed for high-speed applications such as cache and buffer memory. The device is available in a 44-pin plastic TSOP II package, ensuring high-density surface mounting.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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