logo

R1RW0416DGE-2LR#B1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0416DGE-2LR#B1 is suitable for high-speed memory applications in industrial and consumer electronics, particularly in systems requiring efficient cache and buffer memory solutions. Its low power consumption makes it ideal for battery backup systems, ensuring reliable performance in various electronic devices.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44SOJ
IC SRAM 4MBIT PARALLEL 44SOJ
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
Description
Description
The R1RW0416DGE-2LR#B1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed and high-density memory, such as cache and buffer memory. The device is available in a 44-pin SOJ package.
The R1RW0416DGE-2LR#B1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed and high-density memory, such as cache and buffer memory. The device is available in a 44-pin SOJ package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Nicklas or one of our other skilled sales representatives. They'll help you find the right service option.
Nicklas Johansson
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.