logo

R1RW0408DGE-2PI#B1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RW0408DGE-2PI#B1 is designed for high-speed memory applications in industrial and telecommunications sectors. Its characteristics make it suitable for cache and buffer memory in systems requiring high density and fast access times, operating within a wide temperature range of -40 to +85°C.
Specification
Specification
IC SRAM 4MBIT PARALLEL 36SOJ
IC SRAM 4MBIT PARALLEL 36SOJ
Detailed specification
Detailed specification
SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ
SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ
Description
Description
The R1RW0408DGE-2PI#B1 is a 4-Mbit high-speed static RAM organized as 512-kword × 8-bit, featuring a maximum access time of 12 ns. It operates on a single 3.3V supply and is packaged in a 36-pin SOJ for high-density surface mounting. This SRAM is ideal for applications requiring fast, static memory such as cache and buffer memory.
The R1RW0408DGE-2PI#B1 is a 4-Mbit high-speed static RAM organized as 512-kword × 8-bit, featuring a maximum access time of 12 ns. It operates on a single 3.3V supply and is packaged in a 36-pin SOJ for high-density surface mounting. This SRAM is ideal for applications requiring fast, static memory such as cache and buffer memory.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.
Martin Elfstrand
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.