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R1RP0416DSB-2PR#S1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RP0416DSB-2PR#S1 is suitable for high-speed memory applications in industrial and telecommunications sectors, particularly in cache and buffer memory configurations. Its high density and wide bit width make it ideal for systems requiring fast data access and reliability.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Description
Description
The R1RP0416DSB-2PR#S1 is a 4-Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a maximum access time of 12 ns. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is housed in a 44-pin TSOP II package.
The R1RP0416DSB-2PR#S1 is a 4-Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a maximum access time of 12 ns. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is housed in a 44-pin TSOP II package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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