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R1RP0416DSB-2LR#S1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RP0416DSB-2LR#S1 is designed for high-speed static RAM applications in industrial and telecommunications sectors. Its characteristics make it suitable for cache and buffer memory in systems requiring fast data access and high density, ensuring efficient performance in demanding environments.
Specification
Specification
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Description
Description
The R1RP0416DSB-2LR#S1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 5.0V supply, and is completely static, requiring no clock. This SRAM is ideal for applications needing high-speed, high-density memory such as cache and buffer memory.
The R1RP0416DSB-2LR#S1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 5.0V supply, and is completely static, requiring no clock. This SRAM is ideal for applications needing high-speed, high-density memory such as cache and buffer memory.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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