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R1RP0408DGE-2PR#B1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1RP0408DGE-2PR#B1 is designed for high-speed memory applications in industrial and telecommunications sectors. Its characteristics make it suitable for cache and buffer memory in systems requiring fast data access and high density, ensuring efficient performance in various electronic devices.
Detailed specification
Detailed specification
SRAM SRAM 4MB FAST X8 5V SOJ 12NS 0TO70C
SRAM SRAM 4MB FAST X8 5V SOJ 12NS 0TO70C
Description
Description
The R1RP0408DGE-2PR#B1 is a 4-Mbit high-speed static RAM organized as 512-kword × 8-bit. It operates on a single 5.0V supply with a maximum access time of 12ns. This SRAM is ideal for applications requiring high-speed, high-density memory, such as cache and buffer memory in systems. It features completely static memory with no clock required and is packaged in a 400-mil 36-pin plastic SOJ.
The R1RP0408DGE-2PR#B1 is a 4-Mbit high-speed static RAM organized as 512-kword × 8-bit. It operates on a single 5.0V supply with a maximum access time of 12ns. This SRAM is ideal for applications requiring high-speed, high-density memory, such as cache and buffer memory in systems. It features completely static memory with no clock required and is packaged in a 400-mil 36-pin plastic SOJ.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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