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R1LV0216BSB-5SI#B1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1LV0216BSB is suitable for low voltage memory applications in industrial and consumer electronics, particularly where battery operation and backup are critical. Its low power consumption and simple interfacing make it ideal for portable devices, data loggers, and other applications requiring efficient memory solutions.
Specification
Specification
IC SRAM 2MBIT PARALLEL 44TSOP II
IC SRAM 2MBIT PARALLEL 44TSOP II
Detailed specification
Detailed specification
SRAM Memory IC 2Mbit Parallel 55 ns 44-TSOP II
SRAM Memory IC 2Mbit Parallel 55 ns 44-TSOP II
Description
Description
The R1LV0216BSB is a 2-Mbit static RAM (SRAM) memory IC organized as 131,072 words by 16 bits, featuring a single power supply of 2.7V to 3.6V and a maximum access time of 55 ns. It is designed for low power consumption with a standby current of 1µA (typical at 3.0V), making it suitable for battery-operated applications. Packaged in a 44-pin TSOP II, it supports TTL-compatible inputs and outputs, ensuring easy interfacing.
The R1LV0216BSB is a 2-Mbit static RAM (SRAM) memory IC organized as 131,072 words by 16 bits, featuring a single power supply of 2.7V to 3.6V and a maximum access time of 55 ns. It is designed for low power consumption with a standby current of 1µA (typical at 3.0V), making it suitable for battery-operated applications. Packaged in a 44-pin TSOP II, it supports TTL-compatible inputs and outputs, ensuring easy interfacing.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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