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R1LV0108ESF-5SI#B1

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
R1LV0108ESF-5SI#B1 is ideal for low-power memory applications in consumer electronics, telecommunications, and industrial devices. Its low voltage operation and minimal standby current make it suitable for battery-operated and backup systems, ensuring efficient performance in portable and embedded applications.
Specification
Specification
IC SRAM 1MBIT PARALLEL 32TSOP I
IC SRAM 1MBIT PARALLEL 32TSOP I
Detailed specification
Detailed specification
SRAM Memory IC 1Mbit Parallel 55 ns 32-TSOP I
SRAM Memory IC 1Mbit Parallel 55 ns 32-TSOP I
Description
Description
The R1LV0108ESF-5SI#B1 is a 1Mbit static RAM memory IC organized as 128k words by 8 bits, featuring a parallel interface and a maximum access time of 55 ns. It operates on a single power supply of 2.7V to 3.6V and has a low standby current of 0.6µA at 3.0V. This device is designed for applications requiring simple interfacing and low power consumption, making it suitable for battery-operated devices.
The R1LV0108ESF-5SI#B1 is a 1Mbit static RAM memory IC organized as 128k words by 8 bits, featuring a parallel interface and a maximum access time of 55 ns. It operates on a single power supply of 2.7V to 3.6V and has a low standby current of 0.6µA at 3.0V. This device is designed for applications requiring simple interfacing and low power consumption, making it suitable for battery-operated devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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