QSB363ZR
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SENSOR PHOTO 940NM TOP VIEW 2SMD
SENSOR PHOTO 940NM TOP VIEW 2SMD
Detailed specification
Detailed specification
Phototransistors 940nm Top View 2-SMD, Z-Bend
Phototransistors 940nm Top View 2-SMD, Z-Bend
Description
Description
The QSB363ZR is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2.50 x 2.00 mm) surface mount package with a medium wide beam angle of 24°. This device operates within a temperature range of -40 to +85 °C and has a power dissipation of 75 mW.
The QSB363ZR is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2.50 x 2.00 mm) surface mount package with a medium wide beam angle of 24°. This device operates within a temperature range of -40 to +85 °C and has a power dissipation of 75 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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