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QSB363YR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
QSB363YR is suitable for industrial and consumer electronics applications, particularly in infrared sensing and detection systems. Its compact design and wide beam angle make it ideal for use in optical communication, remote control devices, and various automation systems.
Specification
Specification
SENSOR PHOTO 940NM TOP VIEW 2SMD
SENSOR PHOTO 940NM TOP VIEW 2SMD
Detailed specification
Detailed specification
Phototransistors 940nm Top View 2-SMD, Yoke Bend
Phototransistors 940nm Top View 2-SMD, Yoke Bend
Description
Description
The QSB363YR is a subminiature NPN silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. The device operates within a temperature range of -40 to +85 °C and has a collector-emitter voltage rating of 30 V.
The QSB363YR is a subminiature NPN silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. The device operates within a temperature range of -40 to +85 °C and has a collector-emitter voltage rating of 30 V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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